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| QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) FEATURES 0.043 (1.1) 0.020 (0.5) SCHEMATIC * Wavelength = 880 nm, AlGaAs * Wide Emission Angle, 120 ANODE CATHODE ANODE 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) * Surface Mount PLCC-2 Package * High Power NOTES: 1. Dimensions are in inches (mm) 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature Reverse Voltage Peak Forward Current(4) Power Dissipation(1) (Flow)(2,3) Continuous Forward Current (TA = 25C unless otherwise specified) Symbol Topr Tstg Tsol IF VR IFM PD Rating -55 to +100 -55 to +100 260 for 10 sec 100 5 1.75 180 Unit C C C mA V A mW NOTES 1. Derate power dissipation linearly 2.4 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions; tp = 100 s, T = 10 ms. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) MIN. TYP. MAX. UNITS SYMBOL P Peak Emission Wavelength Spectral Bandwidth Emission Angle Forward Voltage Reverse Current Radiant Intensity Radiant Flux Temp. Coeff. of IE Temp. Coeff. of VF Temp. Coeff. of Rise Time Fall Time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s VR = 5 V IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA -- -- -- 880 80 120 1.5 3.0 -- -- 48 10 -0.5 -4 0.25 -- -- -- -- -- 1.8 3.8 1 8 -- -- -- -- -- 1 1 nm nm Deg. V VF IR Ie e -- -- -- 4 -- -- -- -- -- -- -- A mW/sr mW %/K mV/K nm/K TCI TCV TC tr tf s s 2001 Fairchild Semiconductor Corporation DS300385 2/26/01 1 OF 3 www.fairchildsemi.com QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE TYPICAL PERFORMANCE CURVES Fig. 1 Normalized Radiant Intensity vs. Forward Current 10 Fig. 2 Forward Current vs. Forward Voltage 102 Ie - NORMALIZED RADIANT INTENSITY IF - FORWARD CURRENT (mA) 1 Normalized to: IF = 100 mA Pulsed tpw =100 us Duty Cycle = 0.1% TA = 25C 101 IF Pulsed tpw = 100 us Duty Cycle = 0.1% TA = 25C 100 0.1 10-1 0.01 10-2 0.001 1 10 100 1000 10-3 0.8 1.0 1.2 1.4 1.6 IF - FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) Fig. 4 Forward Voltage vs. Ambient Temperature 3 Fig.3 Radiation Diagram 110 120 130 140 150 160 170 180 1.0 100 90 80 70 60 50 40 30 20 10 0 1.0 VF - FORWARD VOLTAGE (V) IF Pulsed tpw = 100 us Duty Cycle = 0.1% 2 IF = 50 mA IF = 100 mA IF = 20 mA 1 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0 -40 -20 0 20 40 60 80 100 TA - TEMPERATURE (C) Fig. 5 Spectral Response (TBD) www.fairchildsemi.com 2 OF 3 2/26/01 DS300385 QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300385 2/26/01 3 OF 3 www.fairchildsemi.com |
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